The NTE172A is a silicon NPN Darlington transistor in a TO92 type package designed for input stage preamplifiers requiring input impedances of several megohms or extremely low level, low noise amplification applications.

Features:

• Absolute maximum ratings: (TA = +25 ° C unless otherwise specified)
• Base collector-voltage, VCBO: 40V
• Collector-emitter voltage, VCEO: 40V
• Emitter-base voltage, VEBO: 12V
• Collector current, IC
• Continuous: 300mA
• Pulse (Note 1) 500mA
• Base current, IB: 50mA
• Total power dissipation (TA = + 25 ° C), PD: 400mW
• Derating above 25 ° C 4mW / ° C
• Operating junction temperature range, TJ -65 ° to + 125 ° C
• Storage temperature range, Tstg -65 ° to + 150 ° C
• Lead temperature (during soldering, 1/16 "± 1/32" of housing for 10 seconds max.), TL + 260 ° C
• Note 1. Pulse test: pulse width 300 µs, duty cycle ? 2%