Features:

• Lower RDS(ON)
• Improved Inductive Ruggedness
• Fast Switching Times
• Rugged Polysilicon Gate Cell Structure
• Lower Input Capacitance
• Extended Safe Operating Area
• Improved High Temperature Reliability
• Drain?Source Voltage :100V
• Drain?Gate Voltage (RGS = 1M) : 100V
• Gate?Source Voltage : 20V
• Continuous Drain Current:
• TC = +25C : 9.2A
• TC = +100C : 6.5A
• Drain Current, Pulsed : 37A
• Gate Current, Pulsed : 1.5A
• Single Pulsed Avalanvhe Energy : 36mJ
• Avalanche Current : 9.2A
• Total Power Dissipation (TC = +25C) : 50W
• Derate Above 25C 0.4W/ : C
• Operating Junction Temperature Range : ?55 to +150C
• Storage Temperature Range : ?55 to +150C
• Thermal Resistance, Junction?to?Ambient : 62.5C/W
• Thermal Resistance, Junction?to?Case : 2.5C/W
• Thermal Resistance, Case?to?Sink (Note 5) :0.5C/W
• Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec): +300C